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You'll be able to modify the pointed out parameters, and Look at it with a "good" final result which can take 2 hours siumlation time. Depending on your conditions, you may accelerate the simulation time.
So can someone please reveal how FET with lower threshold voltage has greater velocity and higher leakage current when FET with large threshold will likely be gradual but popularsongs lower on energy?
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That means I really need to simulate the circuit a lot of instances for getting the outcomes but The problem is that every simulation takes about two several hours and just can make the do the job extremely sluggish.
知乎，让每一次点击都充满意义 —— 欢迎来到知乎，发现问题背后的世界。
I'd exact trouble with Pictures , cek tat the sample documents operate in standard speed, i cudnt resolve the trouble entirely, attempt getting rid of the crystal and Placing mcu velocity at 1Mhz in its Houses
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In case of lvt, conc. of doping and oxide thickness is much more Review to hvt.. Which the reason that a lot more the doping, so additional velocity and much more leakage Examine to hvt.
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Usually this happens when you externally wire a crystal etc. - this introduces click here an incredibly superior velocity oscillator which bottlenecks the simulation and is completely superfluous anyway. Clock frequency is specified as a assets with the microcontroller system.